Publications [#232044] of David N. Beratan

Journal Articles
  1. Hopfield, JJ; Onuchic, JN; Beratan, DN, A molecular shift register based on electron transfer., Science (New York, N.Y.), vol. 241 no. 4867 (August, 1988), pp. 817-820 [17829175], [doi] .

    An electronic shift-register memory at the molecular level is described. The memory elements are based on a chain of electron-transfer molecules and the information is shifted by photoinduced electron-transfer reactions. This device integrates designed electronic molecules onto a very large scale integrated (silicon microelectronic) substrate, providing an example of a "molecular electronic device" that could actually be made. The design requirements for such a device and possible synthetic strategies are discussed. Devices along these lines should have lower energy usage and enhanced storage density.