Publications [#218023] of Henry Everitt

Papers Published
  1. Glinka, Y D and Everitt, H O and Lee, D S and Steckl, A J, Effect of Tm3+-induced defects on the photoexcitation energy relaxation in Tm-doped AlxGa1-xN, Physical Review B (Condensed Matter and Materials Physics), vol. 79 no. 11 (2009), pp. -- [GetabsServlet], [doi] .

    We provide evidence that the Tm3+-induced defects in Tm-doped AlxGa1-xN hosts play a major role in the nonradiative transfer of the excitation energy from the I-1(6) state to the D-1(2) state of Tm3+ ions from which the most efficient photoluminescence (PL) transition (465 nm) occurs. Once the concentration of the Tm3+-induced defects decreases with increasing x, the PL transitions starting from the I-1(6) state (298, 357, 395, 530, and 785 nm) may be significantly enhanced. It is shown that the indirect excitation of the I-1(6) state results from the Auger-type energy transfer due to the nonradiative band-to-band recombinations in the AlxGa1-xN host of a given x. In contrast, the PL transitions starting from the (1)G(4) level (479 and 807 nm) can be excited through either an indirect or a direct regime. In both cases the (1)G(4) level is populated by the radiative relaxation of the higher energy excited states I-1(6), P-3(0), P-3(1), and P-3(2) of Tm3+ ions.