Publications [#218033] of Henry Everitt

Papers Published
  1. {\"O}zg{\"u}r, {\"U}mit and Everitt, Henry O and Keller, Stacia and DenBaars, Steven P, Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells, arXiv, vol. cond-mat.mes-hall (January, 2002) [0210343v1] .

    Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different In compositions. SE threshold power densities (I_th) increased with increasing QW depth (x). Time-resolved differential transmission measurements mapped the carrier relaxation mechanisms and explained the dependence of I_th on x. Carriers are captured from the barriers to the QWs in < 1 ps, while carrier recombination rates increased with increasing x. For excitation above I_th an additional, fast relaxation mechanism appears due to the loss of carriers in the barriers through a cascaded refilling of the QW state undergoing SE. The increased material inhomogeneity with increasing x provides additional relaxation channels outside the cascaded refilling process, removing carriers from the SE process and increasing I_th.