Publications [#314052] of Henry Everitt

Papers Published
  1. Özgür, Ü; Everitt, HO; Keller, S; DenBaars, SP, Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells, Applied Physics Letters, vol. 82 no. 9 (March, 2003), pp. 1416-1418 [s1&Agg=doi], [doi] .

    Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different QW In compositions x. SE threshold energy densities (I-th) increased with increasing x-dependent QW depth. Time-resolved differential transmission measurements mapped the carrier relaxation mechanisms and explained the dependence of I-th on x. Carriers are captured from the barriers to the QWs in <1 ps, while carrier recombination rates increased with increasing x. For excitation above I-th, an additional, fast relaxation mechanism appears due to the loss of carriers in the barriers through a cascaded refilling of the QW state undergoing SE. The increased material inhomogeneity with increasing x provides additional relaxation channels outside the cascaded refilling process, removing carriers from the SE process and increasing I-th. (C) 2003 American Institute of Physics.