Publications [#314138] of Henry Everitt

Papers Published
  1. Choi, S; Kim, T-H; Wu, P; Brown, A; Everitt, HO; Losurdo, M; Bruno, G, Band bending and adsorption/desorption kinetics on N-polar GaN surfaces, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures : Processing, Measurement, and Phenomena : an Official Journal of the American Vacuum Society, vol. 27 no. 1 (2009), pp. 107-112 [GetabsServlet], [doi] .

    Highly reactive N-polar [000-1] GaN surfaces were analyzed using spectroscopic ellipsometry. Following exposure to air, observed changes in the pseudodielectric function near the GaN band edge indicate that surface contamination reduces the band bending. A subsequent Ga adsorption/desorption experiment on pristine N-polar GaN indicates that it contains a mixture of Ga-terminated and N-terminated surfaces. During deposition, Ga adatoms preferentially bond to the dangling bonds on the N-terminated surface: the measured 3.19 eV desorption activation energy equals the Ga-N decomposition energy. Further deposition forms a 1 ML Ga wetting layer whose 2.78 eV desorption activation energy is comparable to the Ga sublimation energy. © 2009 American Vacuum Society.