Abstract:
For a simple submicron semiconductor structure we have calculated exactly the electron distribution f(v,x) within a relaxation-to-local-equilibrium assumption for the collision term of the Boltzmann equation. This is the first calculation of the electron distribution in an inhomogeneous semiconductor. Large applied voltages produce a substantial ballistic peak in f(v,x). But at all voltages contact inhomogeneities and local heating (and cooling) produce an I-V characteristic only weakly dependent on the scattering rate. © 1984 The American Physical Society.
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