Publications [#245185] of Harold U. Baranger

Papers Published
  1. Baranger, HU; Wilkins, JW, Ballistic electrons in an inhomogeneous submicron structure: Thermal and contact effects, Physical Review. B, Condensed Matter, vol. 30 no. 12 (1984), pp. 7349-7351, APS [p7349], [doi] .

    For a simple submicron semiconductor structure we have calculated exactly the electron distribution f(v,x) within a relaxation-to-local-equilibrium assumption for the collision term of the Boltzmann equation. This is the first calculation of the electron distribution in an inhomogeneous semiconductor. Large applied voltages produce a substantial ballistic peak in f(v,x). But at all voltages contact inhomogeneities and local heating (and cooling) produce an I-V characteristic only weakly dependent on the scattering rate. © 1984 The American Physical Society.