Abstract:
We describe the fabrication of submicron devices on the (011) cleave surface of a GaAs heterostructure crystal, in which this surface is extremely narrow. Special purpose devices are produced, which take advantage of the unique characteristics of cleaved-edge-overgrowth. The successful fabrication relies on understanding the surface tension of the electron beam polymethyl methacrylate resist, the workable degree of variation in resist thickness, and on gluing the crystal onto a backing substrate to increase structural strength. We demonstrate functional gate-controlled quantum point contact constrictions placed 9 m from one edge of the cleave surface. © 2012 American Institute of Physics.
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