Abstract:
We reported detailed measurements of the temperature dependence of the quantized Hall effect from 4.2 to 50 K in the i=2 plateau region in InGaAs-InP. We deduce from the data that there is a significant density of localized states between the two Landau levels, with a value of 1×1010 cm-2 meV-1 at the middle of the mobility gap. We also found that the correlations between xx and xy show the trend predicted by the recent two-parameter scaling theory of localization in quantized Hall effect. © 1985 The American Physical Society.
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