Chang, AM; Owusu-Sekyere, K; Chang, TY, *Observation of phase-shift locking of the Aharonov-Bohm effect in doubly connected GaAsAl*_{x}Ga_{1-x}As heterostructure devices,
Solid State Communications, vol. 67 no. 11
(1988),
pp. 1027-1030 .
**Abstract:**

*We have observed a tendency toward locking of the Aharonov-Bohm effect phase shift, in doubly connected, quasi-one-dimensional GaAsAlxGa1-xAs devices. The resistances of adjacent segments within a device exhibit periodic modulations, due to magnetic flux penetrating the area enclosed by the doubly connected geometry, which are phase-shifted from each other by a value of close to 180°. This phase shift value persists over a range of 200 periods (∼4kGauss in magnetic field), and is observed for various current-voltage configurations. © 1988.*