Abstract:
We measure the tunneling conductance (G) and current-voltage (I–V) characteristics for electron tunneling from a bulk doped-GaAs normal metal into the abrupt edge of a fractional quantum Hall effect. We observe clear power law behavior for both the I–V relationship and the conductance versus temperature. For tunneling into the ν=1/3 edge the power law persists for one decade in V (T), and 2.7 (1.7) decades in I(G). This strongly indicates the 1/3 edge behaves like a chiral Luttinger liquid. In contrast, the ν=1 edge is essentially linear, while the 2/3 edge is slightly nonlinear. © 1996 The American Physical Society.
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