Abstract:
We report a systematic study of the 23 fractional quantum Hall effect at low temperatures (65-770 mK) for a GaAs-AlxGa1-xAs sample of very high mobility (106 cm2/V sec). We find the 23 Hall plateau to be accurately quantized. The diagonal and Hall resistivities are observed to be activated at each given filling factor ν=nheB around 23. The activation energy has a maximum value, Δmax, at ν=23 and decreases to each side as ν moves away. By varying the sample mobility and density simultaneously with a backgate bias, we find Δmax strongly mobility and magnetic field dependent. © 1983 The American Physical Society.
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