Publications [#140089] of Stephen W Teitsworth
Papers Published
- Huidong Xu and Stephen W. Teitsworth, Dependence of electric field domain relocation dynamics on contact conductivity in semiconductor superlattices,
Physical Review B, vol. 76 no. 235302
(2007),
pp. 11 pages
(last updated on 2007/12/19)Abstract:
Numerical simulation results are presented for a discrete drift-diffusion rate equation model that describes electronic transport due to sequential tunneling between adjacent quantum wells in weakly coupled semiconductor superlattices. We study the dependence on contact conductivity σ of current-voltage characteristics and transient current response to abrupt steps in applied voltage. For intermediate values of σ, three qualitatively distinct transient responses—each associated with a different mechanism for the relocation of a static charge accumulation layer—are observed for different values of voltage step Vstep; these involve, respectively, (1) the motion of a single charge accumulation layer, (2) the motion of an injected charge dipole, and (3) the motion of an injected monopole. A critical value of σ is identified above which the injected dipole mechanism is not observed for any value of Vstep. Furthermore, at very low σ, we find a reversed static field configuration, i.e., with the high-field domain adjacent to the emitter contact.