Publications of Stephen W Teitsworth

Papers Published

1. Huidong Xu and Stephen W. Teitsworth, Dependence of electric field domain relocation dynamics on contact conductivity in semiconductor superlattices, Physical Review B, vol. 76 no. 235302 (2007), pp. 11 pages
2. S.L. Lu, L. Schrottke, S.W. Teitsworth, R. Hey, H.T. Grahn, Negative differential conductance and bistability in undoped GaAs/AlGaAs quantum-cascade structures, Journal of Applied Physics, vol. 100 no. 023701 (July, 2006), pp. 6 pages
3. S.L. Lu, L. Schrottke, S.W. Teitsworth, R. Hey, H.T. Grahn, Formation of electric-field domains in GaAs/AlGaAs quantum cascade laser structures, Physical Review B, vol. 73 no. 033311 (January, 2006), pp. 4 pages
4. M. Rogozia, H. T. Grahn, S. W. Teitsworth, and K. H. Ploog, Time distribution of the domain boundary relocation in superlattices, Physica B, vol. 314 (2002), pp. 427 - 430
5. M. Rogozia, S.W. Teitsworth, H. T. Grahn, and K. H. Ploog, Relocation dynamics of domain boundaries in semiconductor superlattices, Physical Review B, vol. 65 no. 205303 (2002), pp. 1 - 7
6. K. J. Luo, S.W. Teitsworth, M. Rogozia, H. T. Grahn, L. Bonilla, J. Galan, and N. Ohtani, Controllable bifurcation processes in undoped, photoexcited GaAs/AlAs superlattices, in Proceedings of the 5th experimental chaos conference, World Scientific, edited by M. Ding et al. (2001)
7. I. R. Cantalapiedra, M.J. Bergmann, L. L. Bonilla, and S.W. Teitsworth, Chaotic motion of space charge wavefronts in semiconductors under time-independent voltage bias, Physical Review E, vol. 63 no. 056216 (2001), pp. 1 - 7
8. M. Rogozia, S.W. Teitsworth, H. T. Grahn, and K. Ploog, Statistics of the domain boundary relocation time in semiconductor superlattices, Physical Review B - Rapid Communications, vol. 64 no. 041308 (2001), pp. 1 - 4
9. L. J. Blue, T. Daniels-Race, R. E. Kendall, and S. W. Teitsworth, Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias, Superlattices and Microstructures, vol. 27 (2000), pp. 39 - 51
10. S.W. Teitsworth, Quantum chaos effects in mechanical wave systems, in Proceedings of the 16th Sitges conference, Springer-Verlag, edited by D. Reguera et al. (2000)
11. K. J. Luo, S. W. Teitsworth, H. Kostial, H. T. Grahn, and N. Ohtani, Controllable bistabilities and bifurcations in a photoexcited GaAs/AlAs superlattice, Applied Physics Letters, vol. 74 (1999), pp. 3845 - 3847
12. K. J. Luo and H. T. Grahn and S. W. Teitsworth and K. H. Ploog, Influence of higher harmonics on Poincare maps derived from current self-oscillations in a semiconductor superlattice, Physical Review B, vol. 58 no. 19 (November, 1998), pp. 12613 -- 12616
13. L. J. Blue and T. Danielsrace and R. E. Kendall and C. R. Schmid and S. W. Teitsworth, Dependence of current-voltage characteristics on Al mole fraction in GaAs/AlxGa1-xAs asymmetric double barrier structures, Journal Of Vacuum Science \& Technology B, vol. 15 no. 3 (1997), pp. 696 -- 701
14. M. J. Bergmann and S. W. Teitsworth and L. L. Bonilla and I. R. Cantalapiedra, Solitary-wave conduction in p-type Ge under time-dependent voltage bias, Physical Review B, vol. 53 no. 3 (January, 1996), pp. 1327 -- 1335
15. K. Banoo and T. Danielsrace and C. R. Wallis and S. W. Teitsworth, Phonon scattering in novel superlattice-asymmetric double barrier resonant tunneling structure, Journal Of Vacuum Science \& Technology B, vol. 14 no. 4 (1996), pp. 2725 -- 2730
16. P. J. Turley and C. R. Wallis and S. W. Teitsworth, Selection rule for localized phonon emission in gaas/alas double-barrier structures, Journal Of Applied Physics, vol. 78 no. 10 (November, 1995), pp. 6104 -- 6107
17. R. M. Delacruz and S. W. Teitsworth and M. A. Stroscio, Interface phonons in spherical gaas/al-x ga1-xas quantum dots, Physical Review B, vol. 52 no. 3 (July, 1995), pp. 1489 -- 1492
18. C. R. Wallis and S. W. Teitsworth, Hopf bifurcations and hysteresis in resonant-tunneling diode circuits, Journal Of Applied Physics, vol. 76 no. 7 (October, 1994), pp. 4443 -- 4445
19. P. J. Turley and S. W. Teitsworth, Phonon-assisted tunneling from a 2-dimensional emitter state, Physical Review B, vol. 50 no. 12 (September, 1994), pp. 8423 -- 8432
20. S. W. Teitsworth and P. J. Turley and C. R. Wallis and W. Li and P. K. Bhattacharya, Magnetotunneling measurements of localized optical phonons in gaas/alas double-barrier structures, Semiconductor Science And Technology, vol. 9 no. 5 (May, 1994), pp. 508 -- 511
21. L. L. Bonilla and I. R. Cantalapiedra and M. J. Bergmann and S. W. Teitsworth, Onset of current oscillations in extrinsic semiconductors under dc voltage bias, Semiconductor Science And Technology, vol. 9 no. 5 (May, 1994), pp. 599 -- 602
22. I. R. Cantalapiedra and L. L. Bonilla and M. J. Bergmann and S. W. Teitsworth, Solitary-wave dynamics in extrinsic semiconductors under dc voltage bias, Physical Review B, vol. 48 no. 16 (October, 1993), pp. 12278 -- 12281
23. P. J. Turley and C. R. Wallis and S. W. Teitsworth and W. Li and P. K. Bhattacharya, Tunneling measurements of symmetrical-interface phonons in gaas/alas double-barrier structures, Physical Review B, vol. 47 no. 19 (May, 1993), pp. 12640 -- 12648
24. R. M. Delacruz and S. W. Teitsworth and M. A. Stroscio, Bottleneck effects due to confined phonons in quantum dots, Superlattices And Microstructures, vol. 13 no. 4 (1993), pp. 481 -- 486
25. K. W. Kim and A. R. Bhatt and M. A. Stroscio and P. J. Turley and S. W. Teitsworth, Effects of interface phonon-scattering in multiheterointerface structures, Journal Of Applied Physics, vol. 72 no. 6 (September, 1992), pp. 2282 -- 2287
26. P. J. Turley and S. W. Teitsworth, Theory of localized phonon modes and their effects on electron-tunneling in double-barrier structures, Journal Of Applied Physics, vol. 72 no. 6 (September, 1992), pp. 2356 -- 2366
27. P. J. Turley and S. W. Teitsworth, Effects of localized phonon modes on magnetotunneling spectra in double-barrier structures, Physical Review B, vol. 44 no. 23 (December, 1991), pp. 12959 -- 12963
28. P. J. Turley and S. W. Teitsworth, Phonon-assisted tunneling due to localized modes in double-barrier structures, Physical Review B, vol. 44 no. 15 (October, 1991), pp. 8181 -- 8184
29. P. J. Turley and S. W. Teitsworth, Electronic wave-functions and electron-confined-phonon matrix-elements in gaas/alxga1-xas double-barrier resonant-tunneling structures, Physical Review B, vol. 44 no. 7 (August, 1991), pp. 3199 -- 3210
30. L. L. Bonilla and S. W. Teitsworth, Theory of periodic and solitary space-charge waves in extrinsic semiconductors, Physica D, vol. 50 no. 3 (July, 1991), pp. 545 -- 559
31. S. W. Teitsworth, The physics of space-charge instabilities and temporal chaos in extrinsic photoconductors, Applied Physics A-materials Science \& Processing, vol. 48 no. 2 (February, 1989), pp. 127 -- 136
32. R. M. Westervelt and S. W. Teitsworth, Nonlinear dynamics and chaos in extrinsic photoconductors, Physica D, vol. 23 no. 1-3 (December, 1986), pp. 187 -- 194
33. S. W. Teitsworth and R. M. Westervelt, Nonlinear current voltage characteristics and spontaneous current oscillations in para-ge, Physica D, vol. 23 no. 1-3 (December, 1986), pp. 181 -- 186
34. S. W. Teitsworth and R. M. Westervelt, Subharmonic and chaotic response of periodically driven extrinsic ge photoconductors, Physical Review Letters, vol. 56 no. 5 (February, 1986), pp. 516 -- 519
35. R. M. Westervelt and S. W. Teitsworth and E. G. Gwinn, Chaotic dynamics in ge photoconductors, Physica Scripta, vol. T14 (1986), pp. 65 -- 70
36. S. W. Teitsworth and B. A. Lynn and R. M. Westervelt, Chaotic dynamics in a simple-model of extrinsic photoconductors, Physica Scripta, vol. T14 (1986), pp. 71 -- 75
37. R. M. Westervelt and S. W. Teitsworth, Nonlinear transient-response of extrinsic ge far-infrared photoconductors, Journal Of Applied Physics, vol. 57 no. 12 (1985), pp. 5457 -- 5469
38. S. W. Teitsworth and R. M. Westervelt, Chaos and broad-band noise in extrinsic photoconductors, Physical Review Letters, vol. 53 no. 27 (1984), pp. 2587 -- 2590
39. S. W. Teitsworth and R. M. Westervelt and E. E. Haller, Non-linear oscillations and chaos in electrical breakdown in ge, Physical Review Letters, vol. 51 no. 9 (1983), pp. 825 -- 828