Contact Info:

Office Location:	CIEMAS Building, Room 3521
Office Phone:	(919) 660-5257
Email Address:
Web Page:

Teaching (Fall 2009):

• ECE 162.01, FUND MICROELECTRONIC DEVICES

  Hudson 212, MW 10:05 AM-11:20 AM

• ECE 216.01, SEMICON DEVICES FOR IC

  Hudson 212, MW 02:50 PM-04:05 PM

• ECE 51L.001, MICROELECT DEVICES & CIRCUITS

• ECE 51L.01L, MICROELECT DEVICES & CIRCUITS

  Teer 212, W 04:25 PM-06:55 PM

• ECE 51L.02L, MICROELECT DEVICES & CIRCUITS

  Teer 212, Th 02:50 PM-05:20 PM

• ECE 51L.04L, MICROELECT DEVICES & CIRCUITS

  Teer 212, F 01:15 PM-03:45 PM

• ECE 219.01, DIGITAL INTEGRATED CIR

Education:

PhD, Stanford University, 1983

MS, Stanford, 1976

M.Sc., Cairo University, 1975

B.Sc., Cairo University, 1974

Specialties:

Nanoscale/microscale computing systems
Photonics

Research Interests:

MOS Dielectrics: Technology, Physics, Modeling and Simulation. Ultrathin Oxide Growth Kinetics. Electrical Properties Of Ultrathin Oxides. Tunneling in Ultrathin Dielectrics (TUNNEL PISCES). Effects of Gate Tunneling Currents on the Performance of Future Generations of Static and Dynamic MOS Integrated Circuits. Nanoscale Device Physics, Modeling, Simulation, and Technology (with applications in biology, photonics, NEMS).

Awards, Honors, and Distinctions

Electronics & Photonics Division Award, Electrochemical Society, 2006
Eta Kappa Nu
Fellow, IEEE
Fellow, Electrochemical Society
Rotary Foundation Graduate Fellowship
Sigma Xi
Tau Beta Pi

Recent Publications   (More Publications)

1. Massoud, Hisham Z., Growth kinetics and electrical properties of ultrathin silicon-dioxide layers, ECS Transactions, vol. 2 no. 2 (2006), pp. 189 - 203  [abs].
2. Oliver, Lara D. and Chakrabarty, Krishnendu and Massoud, Hisham Z., An evaluation of the impact of gate oxide tunneling on dual-V _t-based leakage reduction techniques, Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI, vol. 2006 (2006), pp. 105 - 110  [abs].
3. Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5, edited by Massoud, H.Z.;Stathis, J.H.;Hattori, T.;Misra, D.;Baumvol, I.;, ECS Transactions, vol. 1 no. 1 (2005), pp. 310 -  [abs].
4. Shen, M. and Jopling, J. and Massoud, H.Z., On the effects of carrier tunneling on the capacitance-voltage characteristics of ultrathin-oxide MOSFETs, Meeting Abstracts, vol. MA 2005-02 (2005), pp. 1474 -  [abs].
5. Shen, M.Y.C. and Jopling, J. and Massoud, H.Z., On the effects of carrier tunneling on the capacitance-voltage characteristics of ultrathin-oxide MOSFETs, ECS Transactions, vol. 1 no. 1 (2005), pp. 283 - 294  [abs].