| Publications [#63576] of April S. Brown
Papers Published
- Schramm, J.E. and Hu, E.L. and Merz, J.L. and Brown, J.J. and Melendes, M.A. and Thompson, M.A. and Brown, A.S., Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon,
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 11 no. 6
(1993),
pp. 2280 - 3, San Diego, CA, USA [1.586890]
(last updated on 2007/04/14)
Abstract: The etch rates of GaInAs and AlInAs were characterized using a mixture of methane, hydrogen, and argon as a function of self-bias voltage. Effectively infinite etch selectivity between GaInAs and AlInAs was found for voltages below 200 V. This highly selective etch process was applied to the gate recess of a high electron mobility transistor device, and preliminary device measurements were made
Keywords: aluminium compounds;gallium arsenide;high electron mobility transistors;III-V semiconductors;indium compounds;sputter etching;
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