Publications [#63607] of April S. Brown

Papers Published

1. Itoh, T. and Brown, A.S. and Camnitz, L.H. and Wicks, G.W. and Berry, J.D. and Eastman, L.F., A recessed gate Al_0.48In_0.52As/Ga_0.47In_0.53As modulation doped field effect transistor, Proceedings of the IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.85CH2173-3) (1985), pp. 92 - 101, Ithaca, NY, USA
   (last updated on 2007/04/14)

   Abstract:
   1-μm gate Al_0.48In_0.52As/Ga_0.47In_0.53As modulation-doped field effect transistors have been successfully fabricated by using a recessed gate structure and an undoped Al_0.48In_0.52As top layer beneath the gate metal. The fabricated devices exhibited good DC characteristics with a high transconductance and a complete pinch-off characteristic. DC transconductances of 200 mS/mm and 265 mS/mm have been measured at 300K and 77K, respectively

   Keywords:
   aluminium compounds;gallium arsenide;high electron mobility transistors;III-V semiconductors;indium compounds;