| Publications [#63729] of April S. Brown
Papers Published
- Shen, J.-J. and Kim, T.-H. and Brown, A.S., Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates,
IEEE International Symposium on Compound Semiconductors, Proceedings
(2000),
pp. 131 - 135, Monterey, CA [ISCS.2000.947142]
(last updated on 2007/04/14)
Abstract: InGaAs/AlInAs HEMT structures have been grown on oxide-bonded InGaAs substrates. De-oxidation and growth conditions are developed that enable good electrical properties. The highest electron mobility obtained was 7258 cm2/V at 300K. The surface morphology showed undulations. X-ray rocking curve analysis shows differences in lattice constants between the samples grown on control substrates and the oxide-bonded substrates.
Keywords: High electron mobility transistors;Semiconducting indium gallium arsenide;Electric properties;Electron mobility;Morphology;Lattice constants;X ray analysis;
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