- I. Yoon and C. Yi and T. Kirn and A. S. Brown and A. Seabaugh, Effect of surface pretreatment and substrate orientation on the characteristics of InAs quantum dots on Si and SiO2 substrates,
Journal Of Vacuum Science & Technology B, vol. 25 no. 3
pp. 945 -- 947 .
(last updated on 2009/09/08)
The surface m orphology of InAs quantum dots (QDs) on undoped Si (100) shows a strong dependency on surface pretreatments, with as much as 30\% difference in island density with different size distributions. Lowering the V/III fluxes ratio (5 8: 1 to 10: 1) effectively suppresses the average height (47\%) and increases density (75\%) of QDs. While changing the growth temperature (220-300 degrees C) increased the average height by 62\% on chemically etched Si surfaces, nucleation on the SiO2 surface was less sensitive to surface preparation. The authors alsd observe that the specific substrate orientation and annealing at 500 degrees C do not significantly impact the morphology of QDs. (c) 2007 American Vacuum Society.