Papers Published

1. K. S. Mckay and F. P. Lu and J. Kim and C. H. Yi and A. S. Brown and A. R. Hawkins, Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction, Applied Physics Letters, vol. 90 no. 22 (May, 2007) .
   (last updated on 2009/09/08)

   Abstract:
   p-type InGaAs/Si heterojunctions were fabricated through a wafer fusion bonding process. The relative band alignment between the two materials at the heterointerface was determined using current-voltage (I-V) measurements and applying thermionic emission-diffusion theory. The valence and conduction band discontinuities for the InGaAs/Si interface were determined to be 0.48 and -0.1 eV, respectively, indicating a type-II band alignment. (C) 2007 American Institute of Physics.