- T. H. Kim and S. Choi and A. S. Brown and M. Losurdo and G. Bruno, Impact of 4H- and 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy,
Applied Physics Letters, vol. 89 no. 2
(July, 2006) .
(last updated on 2009/09/08)
GaN epitaxial layers have been grown by plasma-assisted molecular beam epitaxy on Si-face 4H- and 6H-SiC(0001)(Si) substrates. The impact of the SiC surface preparation and oxide removal achieved via a Ga flash-off process followed by nitridation on the structure and properties of GaN epitaxial layers is articulated. A correlation among the SiC surface nitridation conditions, the Ga wetting layer development, the nucleation layer, and GaN crystalline properties is revealed. (c) 2006 American Institute of Physics.