- Mishra, Umesh K. and Brown, April S., InGaAs/AlInAs HEMT technology for millimeter wave applications,
Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
pp. 97 - 100 [GAAS.1988.11032] .
(last updated on 2007/04/14)
AlInAS-GaInAs modulation-doped structures grown by MBE (molecular-beam epitaxy) on InP have demonstrated excellent electronic and optical properties. Extremely high sheet charge densities (ns ~5 × 1018 cm-3) and room temperature mobilities (μ ~9500 cm2 V-1 s-1) have been achieved. 0.1-m-gate-length HEMTs (high-electron-mobility transistors) have exhibited an ft (unity current gain cutoff frequency) ~170 GHz, whereas single stage amplifiers using 0.2-μm-gate HEMTs have demonstrated a minimum noise figure of 0.8 dB and an associated gain of 8.7 dB. Ring oscillators have demonstrated 6-ps switching speeds and static frequency dividers operated at 26.7 GHz at room temperature.
Semiconducting Gallium Compounds;Molecular Beam Epitaxy;Transistors;Integrated Circuits;Millimeter Waves;