- Brown, April S. and Kim, Tong-Ho and Choi, Soojeong and Wu, Pae and Morse, Michael and Losurdo, Maria and Giangregorio, Maria M. and Bruno, Giovanni and Moto, Akihiro, Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy,
Physica Status Solidi C: Current Topics in Solid State Physics, vol. 3
pp. 1531 - 1535 [pssc.200565150] .
(last updated on 2007/04/14)
We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350°C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450°C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed. © 2006 WILEY-VCH Verlag GmbH and Co. KGaA.
Semiconducting silicon compounds;Molecular beam epitaxy;Epitaxial growth;Annealing;Ellipsometry;Electric properties;Optical properties;