- Metzger, R.A. and Brown, A.S. and Stanchina, W.E. and Lui, M. and Wilson, R.G. and Kargodorian, T.V. and McCray, L.G. and Henige, J.A., Growth and characterization of low temperature AlInAs,
Journal of Crytal Growth, vol. 111 no. 1-4
pp. 445 - 449 [0022-0248(91)91017-5] .
(last updated on 2007/04/14)
Al0.48In0.52As lattice matched to InP and grown by MBE over a temperature range of 250 to 100°C and under an As4 pressure of 1 × 10-6 to 2 × 10-5 Torr has been investigated. Over this temperature range of 250 to 100°C, resistivity decreases from 2 × 107 to 3 × 106 Ω cm while photoluminescence intensity decreases by two orders of magnitude. Resistivity showed little sensitivity to change in As4 overpressure over the range investigated. Single crystal samples grown in the range of 100 to 150°C showed nonstochiometric excess As of up to 1.4% as determined by secondary ion mass spectrometry, and lattice expansion of 0.1% as determined by X-ray diffraction. Samples grown at temperatures greater than 200°C showed no excess As or lattice expansion.
Molecular Beam Epitaxy;Photoluminescence;X-rays - Diffraction;Mass Spectrometry;Semiconducting Indium Phosphide;