- Rosenbaum, Steven E. and Jelloian, Linda M. and Larson, Lawrence E. and Mishra, Umesh K. and Pierson, Deborah A. and Thompson, Mark S. and Liu, Takyiu and Brown, April S., 2-GHz three-stage AlInAs-GaInAs-InP HEMT MMIC low-noise amplifier,
IEEE Microwave and Guided Wave Letters, vol. 3 no. 8
pp. 265 - 267 [75.242220] .
(last updated on 2007/04/14)
A three-stage monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) has been fabricated using 0.15-μm gate-length InP-based (AlInAs-GaInAs) high electron mobility transistor (HEMT) technology. The LNA exhibited less than 0.5-dB noise figure and greater than 35-dB gain from 2.25 to 2.5 GHz. The input and output return loss exceeded 15 dB across the band. These results are believed to be the best reported to date from a MMIC amplifier in this frequency range.
High electron mobility transistors;Monolithic integrated circuits;Microwave devices;Spurious signal noise;Signal to noise ratio;Semiconductor device manufacture;Semiconducting indium phosphide;Semiconducting aluminum compounds;Semiconducting gallium arsenide;Semiconductor device structures;Electric losses;Performance;