Publications by April S. Brown.

Papers Published

  1. Rosenbaum, Steven E. and Jelloian, Linda M. and Larson, Lawrence E. and Mishra, Umesh K. and Pierson, Deborah A. and Thompson, Mark S. and Liu, Takyiu and Brown, April S., 2-GHz three-stage AlInAs-GaInAs-InP HEMT MMIC low-noise amplifier, IEEE Microwave and Guided Wave Letters, vol. 3 no. 8 (1993), pp. 265 - 267 [75.242220] .
    (last updated on 2007/04/14)

    A three-stage monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) has been fabricated using 0.15-μm gate-length InP-based (AlInAs-GaInAs) high electron mobility transistor (HEMT) technology. The LNA exhibited less than 0.5-dB noise figure and greater than 35-dB gain from 2.25 to 2.5 GHz. The input and output return loss exceeded 15 dB across the band. These results are believed to be the best reported to date from a MMIC amplifier in this frequency range.

    High electron mobility transistors;Monolithic integrated circuits;Microwave devices;Spurious signal noise;Signal to noise ratio;Semiconductor device manufacture;Semiconducting indium phosphide;Semiconducting aluminum compounds;Semiconducting gallium arsenide;Semiconductor device structures;Electric losses;Performance;