- Kropewnicki, Thomas J. and Doolittle, W. Alan and Carter-Coman, Carrie and Kang, Sangboem and Kohl, Paul A. and Jokerst, Nan Marie and Brown, April S., Selective wet etching of lithium gallate,
Journal of the Electrochemical Society, vol. 145 no. 5
pp. 88-90 - .
(last updated on 2007/04/14)
Lithium gallate (LGO) is an attractive, near lattice matched substrate for the growth of GaN. In addition, LGO substrates provide a convenient route to forming thin films of GaN as used in substrate removal or lift-off processes. We report the wet etching of LGO substrates for the production of GaN thin films. Two face-selective LGO etches have been used for the processing of substrates. The etch rate of the cation face is reported here for the first time and is 0.25 μm min-1 at 50 °C. The etching solution is safe and benign to most materials including metallic bonding.
Etching;Crystal lattices;Semiconductor growth;Substrates;Thin films;Film growth;Semiconducting films;