- Palmateer, L. F. and Tasker, P. J. and Itoh, T. and Brown, A. S. and Wicks, G. W. and Eastman, L. F., MICROWAVE CHARACTERISATION OF 1 mu m-GATE Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7 In//0//. //5//3As/InP MODFETs.,
Electronics Letters, vol. 23 no. 1
pp. 53 - 55 .
(last updated on 2007/04/14)
We report microwave characterisation of nominally 1 mu m-gate Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7 In//0//. //5//3As (lattice-matched to InP) modulation-doped field-effect transistors (MODFETs). The Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7 In//0//. //5//3As MODFETs have room-temperature extrinsic transconductances as high as 250mS/mm. A room-temperature unity-current-gain cutoff frequency (f//T) of 22 GHz and an f//m//a//x of 35 GHz were measured for a 1. 2 mu m-gate MODFET.
MICROWAVE DEVICES;SEMICONDUCTING ALUMINUM COMPOUNDS - Applications;SEMICONDUCTING GALLIUM COMPOUNDS - Applications;SEMICONDUCTING INDIUM COMPOUNDS - Applications;