Publications by April S. Brown.

Papers Published

  1. Palmateer, L. F. and Tasker, P. J. and Itoh, T. and Brown, A. S. and Wicks, G. W. and Eastman, L. F., MICROWAVE CHARACTERISATION OF 1 mu m-GATE Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7 In//0//. //5//3As/InP MODFETs., Electronics Letters, vol. 23 no. 1 (1987), pp. 53 - 55 .
    (last updated on 2007/04/14)

    Abstract:
    We report microwave characterisation of nominally 1 mu m-gate Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7 In//0//. //5//3As (lattice-matched to InP) modulation-doped field-effect transistors (MODFETs). The Al//0//. //4//8In//0//. //5//2As/Ga//0//. //4//7 In//0//. //5//3As MODFETs have room-temperature extrinsic transconductances as high as 250mS/mm. A room-temperature unity-current-gain cutoff frequency (f//T) of 22 GHz and an f//m//a//x of 35 GHz were measured for a 1. 2 mu m-gate MODFET.

    Keywords:
    MICROWAVE DEVICES;SEMICONDUCTING ALUMINUM COMPOUNDS - Applications;SEMICONDUCTING GALLIUM COMPOUNDS - Applications;SEMICONDUCTING INDIUM COMPOUNDS - Applications;