Publications by April S. Brown.

Papers Published

  1. Kim, Tong-Ho and Choi, Soojeong and Brown, April S. and Losurdo, Maria and Bruno, Giovanni, Impact of 4H- And 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy, Applied Physics Letters, vol. 89 no. 2 (2006), pp. 021916 - [1.2220007] .
    (last updated on 2007/04/14)

    GaN epitaxial layers have been grown by plasma-assisted molecular beam epitaxy on Si-face 4H-and 6H-SiC(0001)Si substrates. The impact of the SiC surface preparation and oxide removal achieved via a Ga flash-off process followed by nitridation on the structure and properties of GaN epitaxial layers is articulated. A correlation among the SiC surface nitridation conditions, the Ga wetting layer development, the nucleation layer, and GaN crystalline properties is revealed. © 2006 American Institute of Physics.

    Gallium nitride;Epitaxial growth;Oxides;Nucleation;Molecular beam epitaxy;