Publications by April S. Brown.

Papers Published

  1. Schramm, J.E. and Hu, E.L. and Merz, J.L. and Brown, J.J. and Melendes, M.A. and Thompson, M.A. and Brown, A.S., Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon, J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 11 no. 6 (1993), pp. 2280 - 3 [1.586890] .
    (last updated on 2007/04/14)

    The etch rates of GaInAs and AlInAs were characterized using a mixture of methane, hydrogen, and argon as a function of self-bias voltage. Effectively infinite etch selectivity between GaInAs and AlInAs was found for voltages below 200 V. This highly selective etch process was applied to the gate recess of a high electron mobility transistor device, and preliminary device measurements were made

    aluminium compounds;gallium arsenide;high electron mobility transistors;III-V semiconductors;indium compounds;sputter etching;