- Schramm, J.E. and Hu, E.L. and Merz, J.L. and Brown, J.J. and Melendes, M.A. and Thompson, M.A. and Brown, A.S., Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon,
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 11 no. 6
pp. 2280 - 3 [1.586890] .
(last updated on 2007/04/14)
The etch rates of GaInAs and AlInAs were characterized using a mixture of methane, hydrogen, and argon as a function of self-bias voltage. Effectively infinite etch selectivity between GaInAs and AlInAs was found for voltages below 200 V. This highly selective etch process was applied to the gate recess of a high electron mobility transistor device, and preliminary device measurements were made
aluminium compounds;gallium arsenide;high electron mobility transistors;III-V semiconductors;indium compounds;sputter etching;