- Itoh, T. and Brown, A.S. and Camnitz, L.H. and Wicks, G.W. and Berry, J.D. and Eastman, L.F., Depletion- and enhancement-mode Al0.48In0.52As/Ga0.47In0.53As modulation-doped field-effect transistors with a recessed gate structure,
Gallium Arsenide and Related Compounds 1985. Proceedings of the Twelfth International Symposium
pp. 571 - 6 .
(last updated on 2007/04/14)
Depletion- and enhancement-mode Al0.48In0.52As/Ga0.47In0.53As modulation doped field effect transistors with 1 μm gate length have been successfully fabricated by employing a recessed gate structure and an undoped Al0.48In0.52As top layer beneath the gate metal. The fabricated devices exhibited good DC characteristics with a high transconductance and a complete pinch-off characteristic. For both depletion- and enhancement-mode devices, the transconductances of 250 mS/mm and 300 mS/mm have been measured at 300K and 77K, respectively
aluminium compounds;gallium arsenide;high electron mobility transistors;III-V semiconductors;indium compounds;