- Brown, A. S. and Palmateer, S. C. and Wicks, G. W. and Eastman, L. F. and Calawa, A. R., BEHAVIOR OF UNINTENTIONAL IMPURITIES IN Ga//0//. //4//7In//0//. //5//3As GROWN BY MBE.,
Journal of Electronic Materials, vol. 14 no. 3
pp. 367 - 378 .
(last updated on 2007/04/14)
A number of factors contribute to the high n-type background carrier concentration (high 10**1**5 to low 10**1**6 cm** minus **3) measured in MBE Ga//0//. //4//7In//0//. //5//3As lattice-matched to InP. The results of this study indicate that the outdiffusion of impurities from InP substrates into GaInAs epitaxial layers can account for as much as two-thirds of the background carrier concentration and can reduce mobilities by as much as 40%. These impurities and/or defects can be gettered at the surfaces of the InP by heat treatment and then removed by polishing. The GaInAs epitaxial layers grown on the heat-treated substrates have significantly improved electrical properties. Hall and SIMS measurements indicate that both donors and acceptors outdiffuse into the epitaxial layers during growth resulting in heavily compensated layers with reduced mobilities. The dominant donor species was idenfified by SIMS as Si, and the dominant acceptors as Fe, Cr and Mn.
SEMICONDUCTOR MATERIALS - Impurities;MOLECULAR CRYSTALS - Epitaxial Growth;SEMICONDUCTING INDIUM COMPOUNDS - Charge Carriers;MOLECULAR BEAMS;