- Brown, A.S. and Mishra, U.K. and Henige, J.A. and Delaney, M.J., The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality,
J. Appl. Phys. (USA), vol. 64 no. 7
pp. 3476 - 80 [1.341482] .
(last updated on 2007/04/14)
The quality of GaInAs-AlInAs epitaxial layers is found to be critically dependent on the degree of (100)-InP substrate misorientation. The alloy quality of both materials is improved when the substrate is misoriented 4° off the (100). The heterojunction interface quality as determined by the full width at half-maximum of quantum-well photoluminescence is also improved when a substrate misoriented by 4° is used. A degradation of both alloy and interface quality as compared to material on (100) InP is observed when the misorientation is 2°. These effects are also observed for strained quantum-well structures
aluminium compounds;gallium arsenide;III-V semiconductors;indium compounds;luminescence of inorganic solids;photoluminescence;semiconductor epitaxial layers;semiconductor quantum wells;