- Bruno, Giovanni and Losurdo, Maria and Giangregorio, Maria M. and Capezzuto, Pio and Brown, April S. and Kim, Tong-Ho and Choi, Soojeong, Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN,
Applied Surface Science, vol. 253 no. 1 SPEC ISS
pp. 219 - 223  .
(last updated on 2007/04/14)
GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation. © 2006 Elsevier B.V. All rights reserved.
Ellipsometry;Epitaxial growth;Silicon carbide;Plasma applications;Metallorganic chemical vapor deposition;Nucleation;