- Losurdo, M. and Giangregorio, M.M. and Capezzuto, P. and Bruno, G. and Namkoong, G. and Doolittle, W.A. and Brown, A.S., A chemical perspective of GaN polarity: the use of hydrogen plasma dry etching versus NaOH wet etching to determine polarity,
Materials and Devices for Optoelectronics and Microphotonics. Symposia (Materials Research Society Symposium Proceedings Vol.722)
pp. 103 - 8 .
(last updated on 2007/04/14)
The use of dry hydrogen plasma etching is evaluated for determination of GaN polarity and critically compared to wet etching in NaOH. It is shown that hydrogen plasma etching is effective in revealing inversion domains (IDs) and some types of dislocations. This is because the surface morphology is unchanged by the hydrogen treatment, and, hence, the surface reactivity is not masked
dislocation density;domains;gallium compounds;III-V semiconductors;semiconductor epitaxial layers;sputter etching;surface morphology;wide band gap semiconductors;