- Rosenbaum, Steven E. and Jelloian, Linda M. and Brown, April S. and Thompson, Mark A. and Matloubian, Mehran and Larson, Lawrence E. and Lohr, Ross and Kormanyos, Brian K. and Rebeiz, Gabriel M. and Katehi, Linda P.B., 213 GHz AlInAs/GaInAs/InP HEMT MMIC oscillator,
Technical Digest - International Electron Devices Meeting
pp. 924 - 926 [IEDM.1993.347470] .
(last updated on 2007/04/14)
We have fabricated submillimeter-wave MMIC oscillator circuits using AlInAs/GaInAs/ HEMTs on InP substrates, which have resulted in oscillators operating at fundamental frequencies of 155 and 213 GHz. These results are believed to be the highest frequency three-terminal oscillators reported to date.
Equivalent circuits;Molecular beam epitaxy;Field effect transistors;Heterojunctions;Substrates;