- Brown, A. S. and Wicks, G. W. and Eastman, L. F. and Palmateer, S. C., DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF MBE Ga//0//. //4//7In//0//. //5//3As PLANAR DOPED BARRIERS ON InP SUBSTRATES.,
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, vol. 2 no. 2
pp. 194 - 196 [1.582777] .
(last updated on 2007/04/14)
The potential barrier height in planar-doped barrier structures is particularly sensitive to the concentration of background impurities present in the nominally undoped regions. MBE grown GaInAs lattice matched to InP typically has n-type background carrier concentrations in the 10**1**6 cm** minus **3 range. This high level can cause lowering of the barrier to near zero. By subjecting the InP substrates to a heat treatment process before growth in order to inhibit impurity outdiffusion higher purity GaInAs can be grown and planar-doped barrier devices with more reproducible characteristics are expected.
SEMICONDUCTING GALLIUM COMPOUNDS;SEMICONDUCTING INDIUM COMPOUNDS;HEAT TREATMENT;ELECTRIC PROPERTIES;