- Carter-Coman, Carrie and Bicknell-Tassius, Robert and Benz, Rudolph G. and Brown, April S. and Jokerst, Nan Marie, Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates,
Journal of the Electrochemical Society, vol. 144 no. 2
pp. 29-31 - .
(last updated on 2007/04/14)
New properties associated with selective substrate removal have been observed in the application of this technique to GaAs thin film compliant substrates. Citric acid-and NH4OH-based etches are used to selectively etch the GaAs substrate and stop on an AlAs layer. The AlAs stop-etch layer is transformed into a layer that is almost twice as thick as the original layer, mismatched to the remaining GaAs epilayer, and has a refractive index around 2.0. Replacement of the single AlAs stop etch layer with multiple thin AlGaAs stop etch layers is proposed to alleviate this problem.
Semiconducting gallium arsenide;Substrates;Removal;Thin films;Acids;Semiconducting aluminum compounds;Refractive index;