- Itoh, T. and Brown, A.S. and Camnitz, L.H. and Wicks, G.W. and Berry, J.D. and Eastman, L.F., A recessed gate Al0.48In0.52As/Ga0.47In0.53As modulation doped field effect transistor,
Proceedings of the IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.85CH2173-3)
pp. 92 - 101 .
(last updated on 2007/04/14)
1-μm gate Al0.48In0.52As/Ga0.47In0.53As modulation-doped field effect transistors have been successfully fabricated by using a recessed gate structure and an undoped Al0.48In0.52As top layer beneath the gate metal. The fabricated devices exhibited good DC characteristics with a high transconductance and a complete pinch-off characteristic. DC transconductances of 200 mS/mm and 265 mS/mm have been measured at 300K and 77K, respectively
aluminium compounds;gallium arsenide;high electron mobility transistors;III-V semiconductors;indium compounds;