- Kim, T.-H. and Brown, A.S. and Metzger, R.A., Optical and structural properties of strained InAlAs/InAsxP1-x multi-quantum wells grown by solid source molecular beam epitaxy,
Journal of Applied Physics, vol. 86 no. 5
pp. 2622 - 2627 [1.371101] .
(last updated on 2007/04/14)
The growth of InP/InAsxP1-x and InAlAs/InAsxP1-x heterostructures was studied using P and As sources. The As4 flux is incorporated much less efficiently into higher As percentage InAsP due to the higher strain in the grown InAsP film. The InP/InAsP multiple quantum wells showed photoluminescence at full width at half maximums of 12-19 meV at 4.2 K.
Heterojunctions;Semiconducting indium phosphide;Photoluminescence;Molecular beam epitaxy;Strain;X ray crystallography;Semiconductor growth;