- Rosenbaum, Steven E. and Kormanyos, Brian K. and Jelloian, Linda M. and Matloubian, Mehran and Brown, April S. and Larson, Lawrence E. and Nguyen, Loi D. and Thompson, Mark A. and Katehi, Linda P.B. and Rebeiz, Gabriel M., 155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators,
IEEE Transactions on Microwave Theory and Techniques, vol. 43 no. 4 pt 2
pp. 927 - 933 [22.375256] .
(last updated on 2007/04/14)
We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMT's. These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 μm. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasi-optical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.
Monolithic microwave integrated circuits;Semiconducting gallium arsenide;Semiconducting aluminum compounds;Semiconducting indium phosphide;Electric charge;Gates (transistor);Semiconductor device manufacture;Micrometers;Electron beams;Slot antennas;Molecular beam epitaxy;High electron mobility transistors;