- Brown, A.S. and Mishra, U.K. and Larson, L.E. and Rosenbaum, S.E., The elimination of DC I-V anomalies in Ga0.47In0.53As-Al0.48In0.52As HEMTs,
Gallium Arsenide and Related Compounds 1988. Proceedings of the Fifteenth International Symposium
pp. 445 - 8 .
(last updated on 2007/04/14)
GaInAs-AlInAs HEMTs have improved DC and RF performance as compared with GaInAs-(AlGa)As HEMTs. The drain-source I-V characteristics exhibit a kink related to trap ionization in the AlInAs buffer. This kink is eliminated by using a GaInAs buffer. Sidegating is also dramatically reduced with the GaInAs buffer
aluminium compounds;gallium arsenide;high electron mobility transistors;III-V semiconductors;indium compounds;p-n heterojunctions;