- Mishra, U.K. and Brown, A.S. and Jelloian, L.M. and Hackett, L.H. and Delaney, M.J., High performance submicrometer AlInAs-GaInAs HEMTs,
IEEE Trans. Electron Devices (USA), vol. ED-34 no. 11
pp. 2358 - .
(last updated on 2007/04/14)
The performance of long-gate and short-gate Al0.48In0.52As-Ga0.47In0.53As HEMTs fabricated in high-quality MBE (molecular-beam-epitaxially)-grown material is discussed. The device structures were grown lattice-matched to semi-insulating InP substrates. The typical layer consists of an AlInAs buffer, followed by an undoped GaInAs channel, a thin undoped AlInAs space, a doped AlInAs donor layer, an undoped AlInAs barrier layer, followed finally by an n+ GaInAs cap layer. The two epitaxial layer designs (wafers A and B) investigated to date differed only in the GaInAs channel thickness, 80 nm for wafer A and 40 nm for wafer B. Both the wafers exhibited sheet charge density ns and mobility values of approximately 3.5×1012 cm-2 and 9500 cm2 V-1 S-1 at 300 K and 3×1012 cm-2 and 30000 cm2 V-1 S-1 at 77 K. Devices with 1.3-μm gate length were fabricated on both wafers. Transconductances of over 465 mS/mm at 300 K were measured on several devices on both wafers
aluminium compounds;gallium arsenide;high electron mobility transistors;III-V semiconductors;indium compounds;molecular beam epitaxial growth;semiconductor epitaxial layers;