- Jensen, J.F. and Mishra, U.K. and Brown, A.S. and Beuabien, R.S. and Thompson, M.A. and Jelloian, L.M., 25 GHz static frequency dividers in AlInAs-GaInAs HEMT technology,
1988 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. 31st ISSCC. First Edition
pp. 268 - 9 .
(last updated on 2007/04/14)
The authors describe the ultrahigh-speed performance of static flip-flop divide-by-two circuits implemented in both buffered FET logic (BFL) and capacitatively enhanced logic (CEL) families utilizing 0.2-μm gate-length Al0.48In0.52As-Ga0.47In0.53As high-electron-mobility transistors (HEMT) fabricated on InP substrates. The dividers were tested on-wafer using a probe station at 300 K temperature. The highest operating frequency at 25.4 GHz was achieved with a CEL divider. At this frequency the divider dissipated 63.8 mW. A BFL divider operated at 25.2 GHz with 450 mW power dissipation
aluminium compounds;field effect integrated circuits;flip-flops;frequency convertors;gallium arsenide;high electron mobility transistors;III-V semiconductors;indium compounds;integrated logic circuits;