- Seo, Sang-Woo and Jokerst, Nan Marie and Cho, Sang-Yeon and Brown, April S. and Huang, Sa and Shin, Jeng Jung and Brooke, Martin A., High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors,
IEEE Journal on Selected Topics in Quantum Electronics, vol. 10 no. 4
pp. 686 - 693 [JSTQE.2004.831677] .
(last updated on 2007/04/14)
Inverted metal-semiconductor-metal (I-MSM) photodetectors, which are thin-film MSMs with the growth substrate removed and fingers on the bottom of the device (to eliminate finger shadowing to enhance responsivity), are reported herein for high-speed high-efficiency large-area photodetectors. Reported herein are the highest speed vertically addressed large-area (40-μm diameter) photodetectors reported to date, which operate with a responsivity of 0.16 A/W and a full-width half-maximum of less than 5 ps. Materials, fabrication processes, heterogeneous integration, and characterization of I-MSM photodetectors are presented in this paper, as measured using a fiber-based electrooptic sampling system. These large-area photodetectors are ideal for vertically addressed high-speed optical links which need alignment-tolerant packaging for cost sensitive applications.
Thin films;Semiconducting indium compounds;Electrooptical effects;Electronics packaging;Optical links;Substrates;Sampling;