- Brown, A.S. and Wicks, G.W. and Eastman, L.F., Mn redistribution in doped GaInAs,
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom. (USA), vol. 4 no. 2
pp. 543 - 4 [1.583424] .
(last updated on 2007/04/14)
Summary for only given. The authors discuss some aspects of the diffusion behavior of Mn in the presence of electric fields. Impurity profiles were measured by using secondary ion mass spectrometry (SIMS). No matrix effects exist for Mn detection in either p- or n-type GaInAs, so the data were interpreted in a straightforward manner by comparison with ion-implanted standards
electromigration;gallium arsenide;III-V semiconductors;impurity distribution;indium compounds;secondary ion mass spectra;semiconductor epitaxial layers;