- Mishra, Umesh K. and Brown, April S. and Delaney, M.J. and Greiling, Paul T. and Krumm, Charles F., AlInAs-GaInAs HEMT for microwave and millimeter-wave applications,
IEEE Transactions on Microwave Theory and Techniques, vol. 37 no. 9
pp. 1279 - 1285 [22.32210] .
(last updated on 2007/04/14)
The status of lattice-matched high-electron-mobility transistors (HEMTs) and pseudomorphic AlInAs-GaInAs grown on In substrates is reviewed. The best lattice-matched devices with 0.1-μm gate length had a transconductance gm = 1080 mS/mm and a unity current gain cutoff frequency fT = 178 GHz, whereas similar pseudomorphic HEMTs had gm = 1160 mS/mm and fT = 210 GHz. Single-stage V-band amplifiers demonstrated 1.3- and 1.5-dB noise figures and 9.5- and 8.0-dB associated gains for the lattice-matched and pseudomorphic HEMTs, respectively. The best performance achieved was a minimum noise figure of Fmin = 0.8 dB with a small-signal gain of Ga = 8.7 dB.
Semiconducting Indium Compounds--Applications;Microwave Devices;Semiconducting Aluminum Compounds--Applications;Amplifiers;