Publications by April S. Brown.

Papers Published

  1. Matloubian, M. and Brown, A.S. and Nguyen, L.D. and Melendes, M.A. and Larson, L.E. and Delaney, M.J. and Thompson, M.A. and Rhodes, R.A. and Pence, J.E., 20-GHz high-efficiency AlInAs-GaInAs on InP power HEMT, IEEE Microwave and Guided Wave Letters, vol. 3 no. 5 (1993), pp. 142 - 144 [75.217211] .
    (last updated on 2007/04/14)

    A single stage 20-GHz power amplifier was developed using double-doped AlInAs-GaInAs on InP HEMT. Output power of 516 mW (0.645 W/mm) with power-added efficiency of 47.1% with 7.1-dB gain were obtained from an 800-μm wide device. The device had a saturated output power of more than 560 mW (0.7 W/mm). This is believed to be the highest combination of output power, power density, gain, and power-added efficiency reported for an InP-based FET at this frequency.

    Semiconducting aluminum compounds;Semiconducting indium compounds;Semiconducting gallium arsenide;Power amplifiers;Gain measurement;Electric power measurement;