- Mishra, Umesh K. and Brown, A. S. and Jelloian, L. M. and Hackett, L. H. and Delaney, M. J., HIGH-PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMT'S.,
IEEE Electron Device Letters, vol. 9 no. 1
pp. 41 - 43 [55.20407] .
(last updated on 2007/04/14)
The performance of long (1. 3- mu m) and short (0. 3- mu m) gate-length Al//0//. //4//8In//0//. //5//2 As-Ga//0//. //4//7In//0//. //5//3 high-electron-mobility transistors (HEMTs) is reported. Transconductances of 465 and 650 mS/mm, respectively, were achieved. The 0. 3- mu m-long gate-length device exhibited an f//t greater than 80 GHz. These results are attributed to the excellent electronic properties of the AlInAs-GaInAs modulation-doped system.
SEMICONDUCTING GALLIUM ARSENIDE;SEMICONDUCTING ALUMINUM COMPOUNDS;SEMICONDUCTING INDIUM COMPOUNDS;