- Mishra, U.K. and Brown, A.S. and Jelloian, L.M. and Thompson, M. and Rosenbaum, S.E. and Nguyen, L.D. and Solomon, P.M. and Kiehl, R. and Kwark, Y.H., Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length,
Proc. SPIE - Int. Soc. Opt. Eng. (USA), vol. 1288
pp. 21 - 9 .
(last updated on 2007/04/14)
A novel self-aligned technique for 0.15 μm gate length AlInAs-GaInAs HEMTs has been demonstrated. Devices with an oxide sidewall yielded an fT of 177 GHz whereas devices with no sidewall exhibited an fT greater than 250 GHz. The difference has been related to process damage during plasma deposition of SiO2. An extrinsic fT of 292 GHz was measured at 77 K
aluminium compounds;gallium arsenide;high electron mobility transistors;III-V semiconductors;indium compounds;plasma deposition;solid-state microwave devices;