- Larson, L.E. and Matloubian, M.M. and Brown, J.J. and Brown, A.S. and Rhodes, R. and Crampton, D. and Thompson, M., AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers,
Electronics Letters, vol. 29 no. 15
pp. 1324 - 1326 .
(last updated on 2007/04/14)
High power-added efficiency microwave power amplifier results are reported for AlInAs/GaInAs on InP HEMTs operated at relatively low power supply voltages (2.5-3 V). C-band power amplifiers are reported with power-added efficiencies as high as 67%, and output powers between 200 and 300 mW. This excellent performance at low power supply voltages is attributed to the high gain and low access resistances of the devices, which leads to a high drain efficiency despite the low power supply voltage.
Microwave amplifiers;Semiconducting indium phosphide;Power amplifiers;Semiconducting aluminum compounds;Semiconducting gallium compounds;Performance;Millimeter waves;Electric power supplies to apparatus;