- Seo, Sang-Woo and Cha, Cheolung and Cho, Sang-Yeon and Huang, Sa and Jokerst, Nan M. and Brooke, Martin A. and Brown, April S., Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors,
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 1
pp. 222 - 223 .
(last updated on 2007/04/14)
The enhancement of the impulse response and capacitance performance of thin film InGaAs metal-semiconductor-metal (MSM) was carried out through etching. The capacitances of the MSM were measured using scattering parameter measurements using a lightwave component analyzer. The thin film I-MSM photodetector cladding layers were etched while leaving the adsorbing layers intact. The measured impulse response results show improvement as the thickness of the thin film I-MSMs decrease, which was correlated with the reduction of the capacitance.
Plasma etching;Capacitance;Semiconducting gallium;Impulse response;Semiconducting indium;Thin films;Adsorption;Photoresistors;Light scattering;Threshold voltage;Metallizing;Diaphragms;Permittivity;